High-Temperature Thermoelectricity in LaNiO3–La2CuO4 Heterostructures
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چکیده
منابع مشابه
High temperature electron transport properties in AlGaN/GaN heterostructures
Hall electron mobility H and sheet concentration ns in AlGaN/GaN heterostructures have been measured from 77 to 1020 K. The effect of the deposited Al2O3 layer is also investigated with varying its thickness. It is found that H decreases monotonously with the temperature T and its dependence is well approximated with the function of H=4.5 10 3 exp −0.004T in the temperatures over 350 K. The fun...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2018
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.8b02153